-^anductot zpioduata., {jnc. 20 stern ave. springfield, nefa 'jersey 07081 u.s.a. uhf power transistor telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 BLU11/sl description n-p-n silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 mhz band. features ? multi-base structure and emitter-ballasting resistors for an optimum temperature profile, ? gold metallization ensures excellent reliability. ? the device can be applied at a pl of max. 1,5 wwhen it is mounted on a printed wiring board (see fig.6) without an external heatsink. the transistor has a 4-lead envelope with a ceramic cap (sot-122d). all leads are isolated from the mounting base. quick reference data r.f. performance in a common-emitter class-b circuit. mode of operation narrow band; c.w. t of* tmb = 25 ta =25<1> vce v 12,5 12,5 f mhz 470 470 pl w 2,5 1,5 gp db >10 >12 nc % >55 >55 note 1. device mounted on a printed wiring board (see fig.6). pin configuration pinning-sot122d. fig.1 simplified outline. sot122d. pin 1 2 3 4 description collector emitter base emitter product safety this device incorporates beryllium oxide, the dust of which is toxic. the device is entirely safe provided that the beo disc is not damaged. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by nj semi-conductors is believed to be both accurate and reliable at the time or'going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n .1 semi-conductors encourages customers to verify that datasheets are current before placing orders.
ratings limiting values in accordance with the absolute maximum system (iec 134) collector-base voltage (open emitter) vcbo collector-emitter voltage (open base) vceo emitter-base voltage (open collector) vebo collector current d.c. or average lc; iqavj (peak value), f> 1 mhz icm total power dissipation attmb<90c;f>1 mhz ptot(rf) storage temperature tstg operating junction temperature ti max. max. max. max. max. 36 v 16 v 3 v 0,4 a 1,2 a max. 6 w -65 to+150 "c max. 200 "c 10 ptot(rf) i continuous r.f operation (f > 1 mhz) ii short-time r.f operation during mismatch (f > 1 mhz) 40 80 120 tmb ( 160 fig.2 power/temperature derating curves. thermal resistance dissipation = 4,5 w from junction to ambient'1' at ta = 25 "c; f > 1 mhz (r.f. operation) from junction to mounting base attmb = 25 c; f> 1 mhz (r.f. operation) note 1. device mounted on a printed wiring board (see fig.6). rth j-a (rf) rth j-mb (rf) max. max. 50 k/w 15 k/w
characteristics tj = 25 "c unless otherwise specified collector-base breakdown voltage open emitter; ig = 5 ma collector-emitter breakdown voltage open base; lc= 10 ma emitter-base breakdown voltage open collector; ie = 0,5 ma collector cut-off current vbe = 0; vce=16v second breakdown energy l = 25mh;f=50hz; rbe=10o d.c. current gain ic = 0,3a;vce = 10v collector capacitance at f = 1 mhz ie = ie = 0;vcb = 12,5v feedback capacitance at f = 1 mhz ic = 0;vce= 12,5v collector-mounting base capacitance 400 800 1200 lc (ma) fig.3 t, = 25 c; typical values. v(br)cbo v(br)ceo v(br)ebo 'ces esbr hfe cc cre cc-mb (pf) mm. mm. max. min. min. typ typ typ. 36 v 16 v 3 v 2,5 ma 0,55 mj 25 4 pf 2,5 pf 1,2 pf vcb (v) fig.4 ie = ie = 0; f = 1 mhz; typical values.
d -i --d2- ? h 10 mm scale dimensions (millimetre dimensions are derived from the original inch dimensions) unit mm a 4.17 3.27 i b c 5.85 0,18 5.58 0,14 d 7.50 723 2 724 698 h 2756 2578 l 991 9 14 q 1.58 1.27 (x 90
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